• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    PURPOSE: A protecting film of a PDP(Plasma Display Panel) and a method for mixing materials of the protecting film are provided to increase the emitting efficiency of secondary electrons. CONSTITUTION: A protecting film has a defect level between an energy band gap of a conductive band and an energy valance band. An electron in the defect level emits more energy than an electron in the energy valance band when transiting to a bottom status of a gas ion. The electron in the defect level neutralizes the gas ion by transiting to the bottom status. More secondary batteries are emitted from the protecting film by the transition energy. The protecting film is formed by mixing materials having a large difference of densities to form the defect level in the protecting film.
    公开号:KR20010009959A
    申请号:KR19990028579
    申请日:1999-07-14
    公开日:2001-02-05
    发明作者:윤성주；이종완
    申请人:구자홍；엘지전자 주식회사；
    IPC主号:
    专利说明:

    Protective Layer and Method Of Mixture Of Protective Layer Material In Plasma Display Panel
    [12] TECHNICAL FIELD The present invention relates to a plasma display panel, and more particularly, to a method of mixing a protective film and a protective film material.
    [13] Recently, flat display devices such as liquid crystal displays, field emission displays, and plasma display panels (hereinafter referred to as "PDPs") have been actively developed. Among these flat panel display devices, the PDP has the advantages of a simple structure, easy fabrication, and high luminance and luminous efficiency. In addition, the PDP has a memory function and a wide viewing angle of 160 ° or more, as well as a large screen of 40 inches or more. Such a PDP is roughly classified into an AC driving method and a DC driving method which have large area spinning according to its driving method.
    [14] Referring to FIG. 1, there is shown an AC drive PDP having a lower glass substrate 14 on which an address electrode 2 is mounted, and an upper glass substrate 16 on which a transparent electrode pair 4 is mounted. On the lower glass substrate 14 on which the address electrode 2 is mounted, a lower dielectric thick film 18 in which wall charges are accumulated and a partition wall 8 dividing the discharge cells are formed. The phosphor film 6 is applied to the surfaces of the lower dielectric thick film 18 and the partition wall 8. The phosphor film 6 emits visible light by being emitted by ultraviolet rays generated during plasma discharge. In the upper glass substrate 16, a metal bus electrode pair 20 for reducing resistance of the transparent electrode pair 4 is formed to overlap the transparent electrode pair 4, and an upper dielectric thick film 12 and a protective film 10 are formed. Are formed sequentially. The upper dielectric thick film 12 accumulates wall charge like the lower dielectric thick film 18. The protective film 10 serves to protect the upper dielectric thick film 12 from the impact of gas ions during plasma discharge and to emit secondary electrons. MgO is usually used as the material of the protective film 10. This AC drive type PDP has discharge cells formed by separating the lower and upper glass substrates 14 and 16 by the partition wall 8. A mixed gas of He + Xe or Ne + Xe is injected into this discharge cell.
    [15] In the AC drive type PDP, when a high voltage is applied between any one of the address electrode 2 and the transparent electrode pair 4, plasma discharge occurs in the discharge cell. Subsequently, an alternating voltage is applied between the pair of transparent electrodes 4 so that the plasma discharge continues in the discharge cell. Secondary electrons are generated in the protective film 10 during the plasma discharge. Secondary electron emission in the protective film 10 can be explained by "Auger neutralization theory". According to Auger neutralization theory, as shown in FIG. 2, electrons e1 in the valence band Ev of the protective film 10 transition to the bottom state of the mixed gas ions to neutralize the mixed gas ions. The transition energy at this time causes other electrons e2 in the protective film 10 to be emitted from the protective film 10. The secondary electrons thus generated collide with atoms of other mixed gases, causing the atoms of other mixed gases to ionize. The repeated collision between the secondary electrons and the atoms of the mixed gas causes an avalanche phenomenon in which electrons and gas ions increase. Ultraviolet rays are generated by this avalanche phenomenon, and the red, green, and blue visible light is emitted by the red, green, and blue phosphor film 6 emitted by the ultraviolet rays.
    [16] Accordingly, the secondary electrons emitted from the protective film 10 not only protect the dielectric thick film 12 from sputtering to prolong its life, but also improve discharge and light emitting efficiency, brightness, and lower power consumption.
    [17] On the other hand, it can be seen that the secondary electron emission coefficient γ of the protective film 10 is inversely proportional to the firing voltage (Vf), that is, the discharge start voltage, as shown in Equation (1). Therefore, as the amount of secondary electrons emitted from the protective film 10 increases, the discharge start voltage Vf is lowered.
    [18]
    [19] Here, A and B are related to the ionization of the discharge gas, and satisfy the ionization efficiency α of Equation 2 below.
    [20]
    [20] Where P is the pressure and E is the electric field.
    [21] However, current PDPs have problems of lower efficiency, lower luminance, and higher power consumption than cathode ray tubes (CRTs). In order to solve this problem, a method for increasing the secondary electron emission efficiency of the protective film 10 is required.
    [22] Accordingly, it is an object of the present invention to provide a method of mixing a protective film and a protective film material of a PDP suitable for increasing secondary electron emission efficiency.
    [1] 1 is a perspective view schematically showing a conventional plasma display panel.
    [2] FIG. 2 shows secondary electron emission in the protective film shown in FIG. 1. FIG.
    [3] 3 illustrates secondary electron emission in a protective film of a plasma display panel according to an exemplary embodiment of the present invention.
    [4] 4 is a characteristic diagram showing a discharge initiation voltage Vf of a compound of a single oxide compound and a mixed oxide compound.
    [5] 5 is a characteristic diagram showing a secondary electron emission coefficient of MgO and MgF 2 and mixtures thereof.
    [6] <Explanation of symbols for main parts of drawing>
    [7] 2: address electrode 4: transparent electrode pair
    [8] 6: phosphor film 8: partition wall
    [9] 10: protective film 12: upper dielectric thick film
    [10] 14: lower glass substrate 16: upper glass substrate
    [11] 18: lower dielectric thick film 20: metal bus electrode pair
    [23] In order to achieve the above object, the protective film of the PDP according to the present invention includes a protective film in which different compounds having a large density difference are present so that a defect level exists between the conduction band and the valence band.
    [24] The method of mixing the protective film material of the PDP according to the present invention includes mixing different compounds having a high density difference such that a defect level exists between the conduction band and the valence band in the protective film.
    [25] Other objects and features of the present invention in addition to the above object will become apparent from the description of the embodiments with reference to the accompanying drawings.
    [26] Hereinafter, exemplary embodiments of the present invention will be described with reference to FIGS. 2 to 5.
    [27] Referring to FIG. 2, there is shown a protective film of a PDP according to the present invention in which a defect level (Ed) exists between the energy band gap of the conduction band Ec and the valence band Ev. Electrons present in the defect level Ed in the protective film emit more energy when they transition to the ground state of the gas ions than electrons present in the valence band Ev. Therefore, electrons present in the defect level Ed transition to the ground state of the gas ions to neutralize the gas ions, and at the same time, more secondary electrons are released from the protective film by this transition energy.
    [28] In order to allow the defect level to exist in the protective film, the present invention forms a protective film by mixing materials having a high density difference. This will be described with reference to FIGS. 4 and 5.
    [29] FIG. 4 shows the discharge initiation voltage Vf of a single oxide compound and a mixed oxide compound. As can be seen in Figure 4, it can be seen that the discharge start voltage (Vf) of the single oxide compound is higher than that of the mixed oxide system. As can be seen from Equation 1, since the discharge start voltage (Vf) is inversely proportional to the secondary electron emission coefficient (γ), the secondary electron emission coefficient (γ) of the single oxide compound is lower than that of the mixed oxide system.
    [30] 5 shows secondary electron emission coefficients of MgO and MgF 2 and mixtures thereof. FIG MgO and mixtures of MgF 2 as can be seen in 5 it can be seen that the secondary electron emission coefficient than MgO or MgF 2 is larger. Therefore, it can be expected that a mixture of two compounds than a single compound can increase the secondary electron emission coefficient of the protective film. At this time, the mixture of materials having a high secondary electron emission coefficient does not always have a high secondary electron emission coefficient. For example, as shown in FIG. 4, the mixture of two compounds having a high secondary electron emission coefficient (γ) (MgO + SrO) is a mixture of two compounds having a relatively low secondary electron emission coefficient (γ). It can be seen that the secondary electron emission coefficient is lower than that of SrO). The reason why the mixture (MgO + SrO) of the two compounds having a relatively high secondary electron emission coefficient (γ) has a low secondary electron emission coefficient (γ) is because the density of MgO and SrO is similar.
    [31] Table 1 below shows the properties of the various compounds.
    [32] compoundDensity (g / cm -3 )Atomic numberWeight (g)Number of valences (kg / mm 2 )Plasmon Energy (eV)Bandgap + Electron Affinity (eV) Al 2 O 3 3.90501022427.609.46 BeO3.021225420.009.8 SiO 2 2.303060815.9011.8 MgO3.652040417.4010.3 CaO2.622856412.409.9 ZnO5.603881412.3010.0 SrO4.7046104412.239.6 BaO5.7272153411.139.4 CaF 2 3.183878816.4512.0 LiF2.291226217.8011.9 BaF 2 4.8274175820.7011.0 NaF2.792042210.5011.3 MgF 2 3.177NaCl2.16285827.8510.0 KCl1.98367424.3310.0 NaBr3.204610327.108.5 RbCl2.765412026.178.6 KBr2.755411926.198.1 NaI3.666415026.368.0 KI3.127216025.687.4 CsCl3.977216826.268.4
    [33] As can be seen in Table 1, among the compounds shown in FIG. 14, CaO and SrO have the largest density difference, followed by MgO and SrO, and the lowest density difference is BaO and SrO. When the compounds shown in FIG. 4 are mixed according to the density difference, the secondary electron emission coefficient (γ) decreases in the order of the high density difference, that is, CaO + SrO, MgO + SrO, BaO + SrO.
    [34] As described above, in the method of mixing the protective film and the protective film material of the plasma display panel according to the present invention, the secondary film of the protective film is mixed by causing the mixture of different densities such that the defect level is present between the conduction band and the valence band in the energy band gap. The electron emission efficiency is increased.
    [35] Those skilled in the art will appreciate that various changes and modifications can be made without departing from the technical spirit of the present invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification but should be defined by the claims.
    权利要求:
    Claims (3)
    [1" claim-type="Currently amended] A protective film of a plasma display panel, comprising: a protective film in which different compounds having a large difference in density such that a defect level exists between the conduction band and the valence band are provided.
    [2" claim-type="Currently amended] The method of claim 1,
    The protective film is a protective film of the plasma display panel, characterized in that the mixture of CaO and SrO mixed in a predetermined ratio.
    [3" claim-type="Currently amended] A method of mixing a protective film material of a plasma display panel, comprising mixing different compounds having a large difference in density such that a defect level exists between a conduction band and a valence band in the protective film.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1999-07-14|Application filed by 구자홍, 엘지전자 주식회사
    1999-07-14|Priority to KR19990028579A
    2001-02-05|Publication of KR20010009959A
    优先权:
    申请号 | 申请日 | 专利标题
    KR19990028579A|KR20010009959A|1999-07-14|1999-07-14|Protective Layer and Method Of Mixture Of Protective layer Material In Plasma Display Panel|
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